RUE in Press:

• La Vanguardia (2 articles). 23 March 2010.
• Nota de Prensa de Tecnalia. 26 March 2010.
• TRATERpress, no. 19 November 2010.
• Yahoo Noticias, 7 May 2010.
• Europa Press, 7 May 2010.
• The Free Library. 17 May 2010.
• Compound Semiconductors. 31 May 2010.
• Monografías del SOPT (Servicio de Observación y prospectiva Tecnológica). Ministerio de Defensa, p. 146. Edición 2010.

RUE in Related Forums:

• Jornada CDTI “Materiales de Gap Ancho y Electrónica de Potencia”, Madrid, Spain, 24 April, 2010:
  • “Dispositivos Semiconductores avanzados de Gap ancho para el uso racional de la energía”. Prof. José Millán - CNM.
  • “Semiconductores de potencia en organismos internacionales”. Philippe Godignon - D+T Microelectrónica / CNM.
  • “Aplicabilidad de los semiconductores de Gap ancho en la industria de las energías renovables y la tracción: retos tecnológicos industriales”. Pedro Ibánez - Robotiker-Tecnalia.
• Special Seminar at Warwick University, Coventry, UK, June 17, 2010:
  • “Advanced 1.2kV SiC Rectifiers”. Prof. José Millán – CNM.
• Special Seminar at NTHU (National Tsing Hua University), Hsinchu, Taiwan, April 29, 2010:
  • “Advanced 1.2kV SiC Rectifiers”. Prof. José Millán - CNM.
• International Workshop on WBG Power Electronics at ECS, Hsinchu, Taiwan, April 28-29, 2011:
  • “High Voltage SiC Rectifiers: from 3kV to 9kV”. Prof. José Millán - CNM.
• Frontier Photonic and Electronic Materials and Devices, Ge-Jp-Sp Workshop, Granada, Spain, 16-18 March, 2011.
  • “Thermal assessment of Al(GaIn)N/GaN HEMTs”. F. Calle, S. Martín-Horcajo, R. Cuerdo, M.J. Tadjer, M.F. Romero, J. Grajal, E. Muñoz – UPM. 
• ISiCPEAW 2011 (International SiC Power Electronics Applications Workshop). Kista, Sweden, May 3-4, 2011:
  • “6kV and 9kV SiC Rectifiers”. Prof. José Millán – CNM.
• Seminario especial en Ikerlan, Mondragón, Spain, July 19, 2011:
  • "Los dispositivos de banda prohibida ancha en electrónica de potencia". Javier Sebastián – UO.
• Topical Workshop Heterostructure Microelectronics, Gifu, Japan, Aug 27-31, 2011.
  • “High temperature assessment of Al(GaIn)N/GaN HEMTs for RF and power applications”. F. Calle, S. Martín-Horcajo, R. Cuerdo, A. Boscá, M.F. Romero, M.J. Tadjer, J. Grajal, E. Muñoz – UPM.
• Sectorial Meeting Graphene for ICT, Castelldefels, Spain, Sep 23, 2011:
  • “Technology for graphene-based nanoelectronic devices”. F. Calle, D. López-Romero, A. Boscá, M. Tadjer, T. Palacios.
• The 20th European workshop on Heterostructure Technology (HeTech 2011). Lille, France, November 7-9, 2012:
  • “Power Electronics for Rational Use of Energy”. Prof. José Millán - CNM.
• ECPE Network Meeting, Feldkirchen/Munich, Germany, November 24, 2011:
  • “Wide Band Gap Semiconductor Devices for Rational Use of Energy (RUE)”. Prof. José Millán – CNM.
  • “High Efficiency Amplifiers Linearized with EER/ET Techniques Based on Gallium Nitride (GaN) Semiconductor Devices”. J.A. Cobos - CEI-UPM.
• The Impact of Wide Bandgap Power Semiconductors on Future Power Electronic Systems. 3rd Global COE International Symposium - Electronic Devices Innovation (EDIS 2011). Osaka, Japan, December 16-17, 2011:
  
  • “Prospects of SiC Power Devices”. Prof. José Millán - CNM.
• The 21th European workshop on Heterostructure Technology (HeTech 2012). Barcelona, Spain, November 5-7, 2012:
  • CNM and ISOM has organized HeTech 2012.

Other RUE Actions:

A Group of Interest in Power Electronics (GiP) has been created in the Basque Country. TECNALIA and GAIA are the coordinators of the Group. The industrial Partners are: INGETEAM, TRAINELEC, JEMA, ZIV and ORMAZÁBAL.

The aim of this Group is twofold. On the one hand, the industrial partners are informed of the progresses on the RUE project, in particular on that concerning SiC components. On the other hand, they present their needs in this area to TECNALIA. Therefore, they can be taken into account in the project researches.